Sunday, April 21, 2019

Samsung Successfully Completes 5nm EUV Development to Allow Greater Area Scaling and Ultra-Low Power Benefits

BWW News Desk
April 15, 2019

Samsung Electronics Co Ltd a world leader in advanced semiconductor technology today announced that its 5nanometer nm FinFET process technology is complete in its development and is now ready for customers samples By adding another cuttingedge node to its extreme ultraviolet EUVbased process offerings Samsung is proving once again its leadership in the advanced foundry market pblockquotep idpullquotepblockquote p Compared to 7nm Samsungs 5nm FinFET process technology provides up to a 25 percent increase in logic area efficiency with 20 percent lower power consumption or 10 percent higher performance as a result of process improvement to enable us to have more innovative standard cell architecture p p In addition to power performance area PPA improvements from 7nm to 5nm customers can fully leverage Samsungs highly sophisticated EUV technology Like its predecessor 5nm uses EUV lithography in metal layer patterning and reduces mask layers while providing better fidelity p p Another key benefit of 5nm is that we can reuse all the 7nm intellectual property IP to 5nm Thereby 7nm customers transitioning to 5nm will greatly benefit from reduced migration costs preverified design ecosystem and consequently shorten their 5nm product development p p As a result of the close collaboration between Samsung Foundry and its Samsung Advanced Foundry Ecosystem SAFE partners a robust design infrastructure for Samsungs 5nm including the process design kit PDK design methodologies DM electronic design automation EDA tools and IP has been provided since the fourth quarter of 2018 Besides Samsung Foundry has already started offering 5nm Multi Project Wafer MPW service to customers p p In successful completion of our 5nm development weve proven our capabilities in EUVbased nodes said Charlie Bae Executive Vice President of Foundry Business at Samsung Electronics In response to customers surging demand for advanced process technologies to differentiate their nextgeneration products we continue our commitment to accelerating the volume production of EUVbased technologies p p In October 2018 Samsung announced the readiness and its initial production of 7nm process its first process node with EUV lithography technology The company has provided commercial samples of the industrys first EUVbased new products and has started mass production of 7nm process early this year p p Also Samsung is collaborating with customers on 6nm a customized EUVbased process node and has already received the product tapeout of its first 6nm chip p p Mr Bae continued Considering the various benefits including PPA and IP Samsungs EUVbased advanced nodes are expected to be in high demand for new and innovative applications such as 5G artificial intelligence AI high performance computing HPC and automotive Leveraging our robust technology competitiveness including our leadership in EUV lithography Samsung will continue to deliver the most advanced technologies and solutions to customers p p Samsung foundrys EUVbased process technologies are currently being manufactured at the S3line in Hwaseong Korea Additionally Samsung will expand its EUV capacity to a new EUV line in Hwaseong which is expected to be completed within the second half of 2019 and start production rampup for next year p p span classbwulinebAbout Samsung Electronics Co Ltdbspan p p Samsung inspires the world and shapes the future with transformative ideas and technologies The company is redefining the worlds of TVs smartphones wearable devices tablets digital appliances network systems and memory system LSI and foundry For the latest news please visit the Samsung Newsroom at a referrerpolicyunsafeurl targetblank hrefhttpsctsbusinesswirecomctCTidsmartlinkampurlhttp3A2F2Fnewssamsungcomampesheet51969709ampnewsitemid20190415005837amplanenUSampanchorhttp3A2F2Fnewssamsungcomampindex1ampmd5f4aa68f722fdd851d0908e418e2aa1b3 relnofollowhttpnewssamsungcoma p p p pimg referrerpolicyunsafeurl alt srchttpsctsbusinesswirecomctCTidbwnewsampsty20190415005837r1ampsidweb02ampdistronxamplangen stylewidth0height0span classbwct31415p

SOURCE: BUSINESS WIRE. ©2015 Business Wire


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